MOS memory
英
美 [mɔs ˈmeməri]
网络 MOS存储器
双语例句
- Stack-gate avalanche injection type MOS memory
叠栅雪崩注入MOS存储器 - MOS dynamic random access memory
动态金属氧化物半导体随机存取存储器 - Families and products of MOS memory for semiconductor integrator circuits
GB/T3437-1982半导体集成电路MOS存储器系列和品种 - N-Channel MOS memories-new possibilities for microprocessor memory design
MCM7001型N-沟道MOS随机存储器&为微型信息处理机存储器设计提供新的可能性 - A 409B-bit MOS Memory Device with Single-Transistor Cells
一个用单管单元做成的4096单元MOS存储器件 - EEPROM is an important MOS memory and its role also can't be neglected.
EEPROM作为一种重要的MOS存储器，其作用也不容忽视。 - Five-Transistor Memory Cells in ESFI MOS Technology
绝缘体上外延硅薄膜MOS工艺的五管存储单元 - The DG-1 parity check technique is described in this paper. The dynamic configuration of CPU and the structural principles of MOS memory for Hamming codes are introduced and the fault probability in CPU and MOS memory is analyzed.
本文对DG-1型计算机的奇偶检测技术及CPU动态配置下的可靠性、可维性以及具有Hamming编码MOS存贮器的可靠性、可维性作了详细介绍和分析。 - A 4K MOS Dynamic Random-Access Memory
4KMOS动态随机存储器 - A Design for One-Transistor Cell 4096 Bit MOS Random Access Memory
单管单元4096位MOS随机存贮器的设计 - Effects of Interface Traps in Silicon-Nanocrystals-Based Memory Structures
界面陷阱对硅纳米晶粒基MOS电容的电荷存储特性的影响 - A MOS memory interleave-refreshing method
MOS存储器的轮流刷新法 - The charge storage effect was investigated by high frequency capacitance-voltage ( C-V) measurement. As the annealing temperature increase, the memory window increases first and then decreases, the largest charge storage effect is achieved at700 ℃.
MOS电容的电荷存储效应由高频电容-电压（C-V）测试所确定，随着退火温度的增加，其存储窗口先增加后减少，最大电荷存储效应也在700℃时获得。